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| RF2370 4 RoHS Compliant & Pb-Free Product Typical Applications * WLAN LNA with Bypass Feature * CDMA PCS LNA with Bypass Feature * MMDS LNA with Bypass Feature Product Description The RF2370 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular and WLAN applications. The device functions as an outstanding front end low noise amplifier. The bias current may be set externally. The IC is featured in a standard SOT 6-lead plastic package. 1.80 1.40 0.50 0.35 0.10 MAX. 3V LOW NOISE AMPLIFIER * General Purpose Amplification * Commercial and Consumer Systems TEXT* 1.90 3.10 2.70 3.00 2.60 Shaded lead is pin 1. Dimensions in mm. 0.90 0.70 1.30 1.00 9 1 0.25 0.10 0.37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOT 6-Lead Features * Low Noise and High Intercept Point * Adjustable Bias Current * Power Down Control * Low Insertion Loss Bypass Feature BIAS 1 Logic Control 6 GAIN SELECT * 1.8V to 5V Operation (See Note: Page 2) * 1.5GHz to 3.8GHz Operation GND1 2 5 GND2 RF IN 3 4 RF OUT Ordering Information RF2370 3V Low Noise Amplifier RF2370PCBA-410 Fully Assembled Evaluation Board (WLAN) usable from 1.9GHz to 4GHz with standard tune RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev A4 050727 1-1 RF2370 Absolute Maximum Ratings Parameter Rating Unit Caution! ESD sensitive device. Supply Voltage -0.5 to +6.0 VDC Input RF Level +5 (see note) dBm 32 mA Current Drain, ICC Operating Ambient Temperature -40 to +85 C Storage Temperature -40 to +150 C NOTE: Exceeding any one or a combination of the above maximum rating limits may cause permanent damage. Input RF transients to +15dBm will not harm the device. For sustained operation at inputs >+5dBm, a small dropping resistor is recommended in series with the VCC in order to limit the current due to self-biasing to <32mA. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Operating Range Frequency Range Specification Min. Typ. Max. 900 4000 Unit MHz Condition TAMB =+25C, VCC =3.0V WLAN Low Noise Amplifier Frequency HIGH GAIN MODE Gain Noise Figure Input IP3 Output VSWR Current Drain BYPASS MODE Gain Input IP3 Output VSWR Current Drain 2450 12.0 14.0 1.3 +7.0 1.7:1 7 -3.0 +20.0 1.6:1 2.0 3 0.8 MHz Gain Select<0.8V, VBIAS =3V, T=+25C 1.5 2:1 mA -2.0 dB dBm 3.0 mA V V Gain Select>1.8V, VBIAS =0V Note: Bypass mode insertion loss will degrade gradually as VCC goes below 2.7V. dB dB dBm IIP3 will improve if ICC is raised above 7mA. -4.0 +16.0 Power Supply High Gain mode. Select<0.8V, VBIAS =3V 1.8 V Low Gain mode. VSELECT High Select>1.8V, VBIAS =0V Power Down 0 10 A Gain Select<0.8V, VBIAS =0V, VCC =0V Bias note: Due to the presence of ESD protection circuitry on the RF2370, the maximum allowable collector bias voltage (pin 4) is 4.0V. Higher supply voltages such as 5V are permissible if a series resistor is used to drop VCC to <4.0V for a given ICC. Voltage (VCC) VSELECT Low 1-2 Rev A4 050727 RF2370 Pin 1 Function BIAS Description For low noise amplifier applications, this pin is used to control the bias current. An external resistor can be used to set the bias current for any VBIAS voltage. Interface Schematic VBIAS 2 3 GND1 RF IN Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input pin. This part is designed such that 50 is the optimal source impedance for best noise figure. Best noise figure is achieved with only a series capacitor on the input. RF IN To Bias Circuit RF OUT 4 RF OUT 5 GND2 Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is matched to 50 with a shunt L, series L topology enhances to stability of the device by reducing the high frequency gain above 6GHz. See GND1. 6 GAIN SELECT This pin selects high gain and bypass modes. Gain Select<0.8V, high gain. Gain Select>1.8V, low gain. A series resistor of 100 is required on this pin to enhance stability. Rev A4 050727 1-3 RF2370 Evaluation Board Schematic VREF 1 C1 DNI R1 1.8 k 2 C2 100 pF 3 4 C4 DNI VREF GND SELECT L1 3.3 nH C5 100 pF R3 0 VCC C6 10 nF Logic Control R2 100 6 C3 DNI Select 5 L2 1.2 nH C7 2.0 pF J1 RF IN J2 RF OUT P1-1 P1 1 2 P1-3 P1-4 3 VCC 4 HDR_1X4 1-4 Rev A4 050727 RF2370 Evaluation Board Layout Board Size 0.835" x 0.900" Board Thickness 0.032", Board Material FR-4 Rev A4 050727 1-5 RF2370 1-6 Rev A4 050727 |
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